valence-electron configuration价电子组态
valence shell electron价壳层电子;原子价壳层电子;价壳＜层＞电子
valence e electron价电子;外电子
valence-electron价电子
valence shell electron pair价层互斥电子对;价层电子对
valence shell electron pairs价层电子对数
valence band electron价电子带电子
Valence State Electron Pair Repulsion价态电子对推斥
average valence shell electron energy平均价层电子能
Si_(1-x)Ge_x alloy is a complete solid solution and has almost the same valence electron density with pure Si. Meanwhile, the adding of Ge atom in alloy has small affect on the valence electron densities of C_iC_s and C_iO_i defects.
Si_(1-x)Ge_x合金是一种完全固溶体，其价电子密度分布与纯Si体系几乎相同，且Ge的加入对C_iC_s缺陷和C_iO_i缺陷的价电子密度分布影响也很小。
参考来源 - 硅和硅锗合金半导体中碳相关缺陷和自间隙缺陷的从头计算研究